BUL58B transistor equivalent, silicon npn power transistor.
*Designed for use in electronic ballast applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
U.
*Collector
–Emitter Sustaining Voltage
: VCEO(SUS) = 100V(Min.)
*Collector Saturation Voltage
: VCE(sat) = 0.2V(Max) @ IC= 1A
*High Speed Switching
APPLICATIONS
*Designed for use in electronic ballast applications.
AB.
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